The Importance of Plasma Deposition in Semiconductor Manufacturing

According to the Semiconductor Industry Association, global semiconductor sales grew to $57.8 billion in November 2024. This rising demand indicates a need for manufacturing processes that are both more efficient and more effective. Plasma-enhanced deposition can help facilities meet those needs.

This brief guide explains how argon plasma deposition can help manufacturing plants improve chip quality and enhance efficiency while maintaining their original processes.

Types of Plasma Deposition Processes

Deposition is a key step in the semiconductor manufacturing process that applies insulating layers of silicon dioxide to the substrate surface. There are several different types of plasma deposition processes plants can use depending on the precursor material and intended application, such as:

• Plasma-enhanced chemical vapor deposition (PECVD): Plasma enhances the chemical reactions when depositing ultra-thin films, such as silicon nitride and silicon dioxide. The main advantage of PECVD is its speed and efficiency — it is one of the fastest methods that produces high-quality results.
• Plasma-assisted physical vapor deposition (PAPVD): In physical processes such as sputtering, plasma ejects atoms from the precursor to form hard protective coatings.
• Atomic layer deposition (ALD): In this method, plasma enables surface reactions in a granular process, which creates ultra-thin insulation layers ideal for nanotechnologies and other advanced electronics.

The Plasma Deposition Process

The deposition process in semiconductor manufacturing begins after etching is completed. Regardless of the type of deposition used, the process follows these steps:

1. Plasma Generation

Raw argon is activated and converted to plasma by either radio frequency (RF), direct current (DC) or microwaves. The specific form used to generate the plasma has a direct impact on the plasma’s behavior and corresponding applications:

• RF: Plasma generated through radio frequency offers a high level of control over ion energy, making it ideal for etching and deposition.
• Microwaves: This source generates a high-density plasma that provides excellent precision and control in deposition.
• DC: Direct current produces a plasma that is ideal for physical vapor deposition methods, such as sputtering.

While conventional methods, such as vacuum and open-air plasma generation, require interrupting production to begin the deposition process, atmospheric generation does not require a chamber and can be incorporated directly into the manufacturing line.

2. Precursor Materials Introduction

In PECVD, the insulating material is vaporized and introduced to the plasma as a gas. This gaseous form is called the precursor, and it can include many different substances depending on the specific application:

• Silane (SiH₄) is used to deposit a silicon dioxide (SiO₂) film.
• Ammonia (NH3) and silane are used together to deposit a silicon nitride (Si₃N₄) film.
• A combination of oxygen (O₂) gas and nitrous oxide (N₂O) helps operators control oxygen content in the film.
• Methane (CH₄) is used to deposit carbon-based films.

The precursor gas interacts with the argon plasma and travels to the substrate via gas flow. This process is typically conducted under low pressures and temperatures to accommodate more delicate materials.

3. Plasma-Surface Interaction

The energized plasma interacts with the substrate surface, which enables the precursor to be deposited there. Based on the parameters set for the interaction, this step increases properties like:

• Adhesion
• Surface density
• Film uniformity

This process is also used as part of other manufacturing methods, such as fusion devices and ion implantation.

4. Film Development

The precursor accumulates on the surface of the substrate, developing a thin film. Adjusting the following plasma parameters can help control the film’s characteristics more precisely:

• Pressure
• Gas composition
• Temperature
• Plasma potential
• Power level

Once the process is complete, the wafer goes on to the ion implantation step to alter its electrical properties.

Benefits of Atmospheric Plasma Deposition Systems

Using atmospheric argon plasma for deposition instead of traditional chemical vapor disposition (CVD) processes that involve vacuum or open air plasma can improve manufacturing processes and chip quality. Some benefits include:

• Enhanced material properties: Plasma deposition improves the substrate’s adhesion, hardness and chemical resistance properties. Additionally, because it does not involve ion bombardment, atmospheric plasma deposition increases surface smoothness for improved results.
• Precision and control: Plasma deposition enables engineers to precisely apply ultra-thin insulating layers on complex and even irregularly shaped substrates by changing the plasma parameters as needed.
• Improved efficiency: In contrast to vacuum plasma and open air plasma, atmospheric plasma generation can be an in-line process that improves traceability and reduces queue times between treatment and bonding.
• Environmental benefits: Plasma deposition uses less energy and generates less waste than conventional CVD methods, which can help facilities become more efficient overall.
• Safer materials: Plasma deposition eliminates the need for harsh solvents and other consumables, creating a safer workplace environment for both employees and equipment.
• Lower deposition temperatures: Plasma deposition allows engineers to use temperature-sensitive substrates without altering their innate properties because it can operate at lower temperatures than conventional methods.
• Versatility: Plasma-assisted deposition can be used with many different substrates and applications, including ceramics, polymers and metals.

While other deposition methods can achieve a uniform, durable coating, plasma-assisted deposition enables the completion of more complex pieces with abnormal shapes.

Applications of Plasma Deposition

Plasma deposition is a flexible, versatile insulating method used in various applications across a wide range of industries. Some of the most common ways engineers incorporate the plasma deposition process in semiconductor manufacturing include:

• Semiconductor packaging: Plasma deposition methods afford precise control, simplifying the semiconductor packaging process and creating the desired electrical properties of a reliable package.
• Electronics assembly: Using plasma deposition to assemble completed circuit boards and other electronic devices creates an insulating layer that enhances the device’s properties.
• Medical devices and diagnostics: Plasma deposition can be used to add protective coatings to medical devices to improve performance and durability.
• Sensor coatings: Plasma deposition creates purpose-specific coatings for targeted sensor applications.
• Nanotechnologies: Because plasma deposition is so precise, it works well for coating even the smallest technologies.

Enhance Processes With Argon Plasma Deposition Equipment From Surfx Technologies

Working with the right equipment is critical for high-volume semiconductor manufacturing requirements. Atmospheric argon plasma equipment is suitable for engineers looking for a more efficient alternative to vacuum or open air plasma generation.

Our innovative atmospheric plasma machines generate plasma without requiring a chamber, saving you valuable floor space in your facility and improving manufacturing efficiency.

Partner with a company that will help your facility improve in more ways than one. Request a demo today to get started, or contact our team for more information on any of our solutions.